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Ruijing Ge

3 papers hereh-index 132.2k citations30 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • middle author1

Across the 2 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall3

identity via Semantic Scholar / OpenAlex

activity
20172021
most citedUniversal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

4 citations · 6 across the 3 of their papers we have counts for

collaborators
Showing 2020Show all

1 paper · 1 filter

cond-mat.mes-hall2020★ 1 cited

Single-defect Memristor in MoS2​ Atomic-layer

Saban M. Hus, Ruijing Ge, Po-An Chen +7

Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-den…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.