4 citations · 6 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2021★ 4 cited
Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect
Xiaohan Wu, Ruijing Ge, Yuqian Gu +9
Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal…
cond-mat.mes-hall2020★ 1 cited
Single-defect Memristor in MoS Atomic-layer
Saban M. Hus, Ruijing Ge, Po-An Chen +7
Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-den…
cond-mat.mes-hall2017★ 1 cited
Towards Universal Non-Volatile Resistance Switching in Non-metallic Monolayer Atomic Sheets
Ruijing Ge, Xiaohan Wu, Myungsoo Kim +5
Here, we report the intriguing observation of stable non-volatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in…