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Origin of Irradiation Synergistic Effects in Silicon Bipolar Transistors: a Review
Yu Song, Su-Huai Wei
The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement…
Materials design principles towards high hole mobility learning from an abnormally low hole mobility of silicon
Q. L. Yang, H. X. Deng, S. H. Wei +2
Si dominates the semiconductor industry material but possesses an abnormally low room temperature hole mobility (505 cm^2/Vs), which is four times lower than that of Diamond and Ge…
Exploring In(SeTe) alloys as photovoltaic materials
Wei Li, Xuefen Cai, Nicholas Valdes +4
InSe in the three-dimensional (3D) hexagonal crystal structure with space group (-InSe) has a direct band gap of 1.8 eV and high absorption coeffici…
A Unified Theory and Fundamental Rules of Strain-dependent Doping Behaviors in Semiconductors
Xiaolan Yan, Pei Li, Su-Huai Wei +1
Enhancing the dopability of semiconductors via strain engineering is critical to improving their functionalities, which is, however, largely hindered by the lack of fundamental rul…
Universal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures
Yu Song, Guanghui Zhang, Xue-Fen Cai +6
Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-si…
Chemical trends in the high thermoelectric performance of the pyrite-type dichalcogenides: ZnS2, CdS2 and CdSe2
Tiantian Jia, Jesús Carrete, Georg K. H. Madsen +2
The thermoelectric properties of the three pyrite-type IIB-VIA2 dichalcogenides (ZnS2, CdS2 and CdSe2) are systematically investigated and compared with those of the prototype ZnSe…