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Enabling visible-light absorption and p-type doping in In2O3 by adding Bi
Fernando P. Sabino, Su-Huai Wei, Anderson Janotti
In2O3 is a prototype wide-band-gap semiconductor that exhibits metallic conductivity when highly doped with Sn while retaining a high degree of transparency to visible light. It is…
Unified theory of the direct or indirect bandgap nature of conventional semiconductors
Lin-Ding Yuan, Hui-Xiong Deng, Shu-Shen Li +2
Although the direct or indirect nature of the bandgap transition is an essential parameter of semiconductors for optoelectronic applications, the understanding why some of the conv…
Strong Proton-Defect Interaction in Synergistic Irradiation Damage System
Ying Zhang, Yang Liu, Jie Zhao +3
We experimentally investigated total ionizing dose (TID) response of the input-stage PNP transitor in an operational amplifier LM324N with various initial displacement damage (IDD)…
Photocorrosion-limited maximum efficiency of solar photoelectrochemical water splitting
Ling-Ju Guo, Jun-Wei Luo, Tao He +2
Photoelectrochemical (PEC) water splitting to generate hydrogen is one of the most studied methods for converting solar energy into clean fuel because of its simplicity and potenti…