15 citations · 28 across the 7 of their papers we have counts for
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Revealing the nature of defects in quasi free standing mono-layer graphene on SiC(0001) by means of Density Functional Theory
Tommaso Cavallucci, Yuya Murata, Makoto Takamura +3
Quasi free standing monolayer graphene (QFMLG) grown on SiC by selective Si evaporation from the Si-rich SiC(0001) face and H intercalation displays irregularities in STM and AFM a…
Electronic properties of WS on epitaxial graphene on SiC(0001)
Stiven Forti, Antonio Rossi, Holger Büch +12
This work reports an electronic and micro-structural study of an appealing system for optoelectronics: tungsten disulphide WS on epitaxial graphene (EG) on SiC(0001). The WS$_2…
Atomic and Electronic Structure of Si Dangling Bonds in Quasi-Free-Standing Monolayer Graphene
Yuya Murata, Tommaso Cavallucci, Valentina Tozzini +7
Si dangling bonds without H termination at the interface of quasi-free standing monolayer graphene (QFMLG) are known scattering centers that can severely affect carrier mobility. I…