Electronic properties of WS${}_2$ on epitaxial graphene on SiC(0001)

Abstract

This work reports an electronic and micro-structural study of an appealing system for optoelectronics: tungsten disulphide WS${}_2$ on epitaxial graphene (EG) on SiC(0001). The WS${}_2$ is grown via chemical vapor deposition (CVD) onto the EG. Low-energy electron diffraction (LEED) measurements assign the zero-degree orientation as the preferential azimuthal alignment for WS${}_2$/EG. The valence-band (VB) structure emerging from this alignment is investigated by means of photoelectron spectroscopy measurements, with both high space and energy resolution. We find that the spin-orbit splitting of monolayer WS${}_2$ on graphene is of 462 meV, larger than what is reported to date for other substrates. We determine the value of the work function for the WS${}_2$/EG to be 4.5$\pm$0.1 eV. A large shift of the WS${}_2$ VB maximum is observed as well , due to the lowering of the WS${}_2$ work function caused by the donor-like interfacial states of EG. Density functional theory (DFT) calculations carried out on a coincidence supercell confirm the experimental band structure to an excellent degree. X-ray photoemission electron microscopy (XPEEM) measurements performed on single WS${}_2$ crystals confirm the van der Waals nature of the interface coupling between the two layers. In virtue of its band alignment and large spin-orbit splitting, this system gains strong appeal for optical spin-injection experiments and opto-spintronic applications in general.