most citedA computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

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eess.SY2022★ 15 cited

C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory

Mor M. Dahan, Evelyn T. Breyer, Stefan Slesazeck +2

Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In…