51 citations · 66 across the 2 of their papers we have counts for
2 papers
eess.SY2022★ 15 cited
C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory
Mor M. Dahan, Evelyn T. Breyer, Stefan Slesazeck +2
Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In…
cond-mat.mtrl-sci2017★ 51 cited
A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device
Milan Pešić, Christopher Künneth, Michael Hoffmann +7
The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor technol…