43 citations · 47 across the 4 of their papers we have counts for
Showing physics.app-phShow all
2 papers · 1 filter
physics.app-ph2021
Ferroelectric HfO Memory Transistors with High- Interfacial Layer and Write Endurance Exceeding Cycles
Ava Jiang Tan, Yu-Hung Liao, Li-Chen Wang +3
We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding cycles. The ferroelectric transistors (FeFETs) incorporate…
physics.app-ph2020★ 2 cited
Anomalous Subthreshold Behaviors in Negative Capacitance Transistors
Yu-Hung Liao, Daewoong Kwon, Suraj Cheema +5
Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, su…