43 citations · 61 across the 5 of their papers we have counts for
5 papers
Ferroelectric HfO Memory Transistors with High- Interfacial Layer and Write Endurance Exceeding Cycles
Ava Jiang Tan, Yu-Hung Liao, Li-Chen Wang +3
We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding cycles. The ferroelectric transistors (FeFETs) incorporate…
Negative Capacitance Enables FinFET Scaling Beyond 3nm Node
Ming-Yen Kao, Harshit Agarwal, Yu-Hung Liao +6
A comprehensive study of the scaling of negative capacitance FinFET (NC-FinFET) is conducted with TCAD. We show that the NC-FinFET can be scaled to "2.1nm node" and almost "1.5nm n…
Anomalous Subthreshold Behaviors in Negative Capacitance Transistors
Yu-Hung Liao, Daewoong Kwon, Suraj Cheema +5
Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, su…
Compact Device Models for FinFET and Beyond
Darsen D. Lu, Mohan V. Dunga, Ali M. Niknejad +6
Compact device models play a significant role in connecting device technology and circuit design. BSIM-CMG and BSIM-IMG are industry standard compact models suited for the FinFET a…
Differential voltage amplification from ferroelectric negative capacitance
Asif I. Khan, Michael Hoffmann, Korok Chatterjee +8
It is well known that one needs an external source of energy to provide voltage amplification. Because of this, conventional circuit elements such as resistors, inductors or capaci…