activity
20132026
most citedInfluence of Polymorphism on the Electronic Structure of GaO

68 citations · 592 across the 32 of their papers we have counts for

collaborators
Showing 2018Show all

6 papers · 1 filter

cond-mat.mtrl-sci2018★ 45 cited

Charge-transfer effect in hard x-ray 1 and 2 photoemission spectra: LDA+DMFT and cluster-model analysis

Mahnaz Ghiasi, Atsushi Hariki, Mathias Winder +6

We study and hard x-ray photoemission spectra (XPS) in a series of late transition metal oxides: FeO (3), FeTiO (3), CoO (3) and NiO (3$d…

cond-mat.mtrl-sci2018

Charge transfer and tunable built-in electric fields across semiconductor-crystalline oxide interfaces

Zheng Hui Lim, Nicholas F. Quackenbush, Aubrey Penn +10

Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors an…

cond-mat.str-el2018★ 20 cited

Cooperative Effects of Strain and Electron Correlation in Epitaxial VO2 and NbO2

Wei-Cheng Lee, Matthew J. Wahila, Shantanu Mukherjee +9

We investigate the electronic structure of the epitaxial VO films in the rutile phase using the density functional theory combined with the slave spin method (DFT+SS). In DFT-S…

cond-mat.mtrl-sci2018★ 65 cited

Tailoring Materials for Mottronics: Excess Oxygen Doping of a Prototypical Mott Insulator

Philipp Scheiderer, Matthias Schmitt, Judith Gabel +7

The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons.…

cond-mat.mtrl-sci2018★ 50 cited

Electronic structure of negative charge transfer CaFeO3 across the metal-insulator transition

Paul C. Rogge, Ravini U. Chandrasena, Antonio Cammarata +12

We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic st…

cond-mat.mtrl-sci2018★ 30 cited

Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

Slavomír Nemšák, Mathias Gehlmann, Cheng-Tai Kuo +10

The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switch…