activity
20042022
most citedObservation of discrete time-crystalline order in a disordered dipolar many-body system

1k citations · 7.1k across the 47 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

7 papers · 1 filter

cond-mat.mtrl-sci2020★ 45 cited

Efficient Conversion of Nitrogen to Nitrogen-Vacancy Centers in Diamond Particles with High-Temperature Electron Irradiation

Yuliya Mindarava, Rémi Blinder, Christian Laube +9

Fluorescent nanodiamonds containing negatively-charged nitrogen-vacancy (NV) centers are promising for a wide range of applications, such as for sensing, as fluorescence biomar…

cond-mat.mtrl-sci2017★ 102 cited

Photoluminescence excitation spectroscopy of SiV and GeV color center in diamond

Stefan Häußler, Gergő Thiering, Andreas Dietrich +8

Color centers in diamond are important quantum emitters for a broad range of applications ranging from quantum sensing to quantum optics. Understanding the internal energy level st…

cond-mat.mtrl-sci2014

Isotopically varying spectral features of silicon vacancy in diamond

Andreas Dietrich, Kay D. Jahnke, Jan M. Binder +4

The silicon-vacancy centre (SiV) in diamond has interesting vibronic features. We demonstrate that the zero phonon line position can be used to reliably identify the silicon isotop…

cond-mat.mtrl-sci2013★ 229 cited

Electronic structure of the negatively-charged silicon-vacancy center in diamond

Lachlan J. Rogers, Kay D. Jahnke, Marcus W. Doherty +8

The negatively-charged silicon-vacancy (SiV) center in diamond is a promising single photon source for quantum communications and information processing. However, the center's…

cond-mat.mtrl-sci2013★ 35 cited

Statistical investigations on nitrogen-vacancy center creation

Denis Antonov, Timo Häußermann, Andrew Aird +10

Experiments show that shallow nitrogen implantations (<10keV) result in a negatively charged nitrogen-vacancy center (NV-) yield of 0.01-0.1%. The most succesful technique for intr…

cond-mat.mtrl-sci2005★ 95 cited

Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins

Eisuke Abe, Akira Fujimoto, Junichi Isoya +2

Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance tech…

cond-mat.mtrl-sci2004★ 102 cited

Electron spin phase relaxation of phosphorus donors in nuclear spin enriched silicon

Eisuke Abe, Kohei M. Itoh, Junichi Isoya +1

We report a pulsed EPR study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified 29^Si and natural abundance Si single crystals measured a…