137 citations · 288 across the 13 of their papers we have counts for
4 papers · 1 filter
Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
Christoph Wilflingseder, Johannes Aberl, Enrique Prado Navarette +11
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport…
A group-IV double heterostructure light emitting diode for room temperature gain in Silicon
Andreas Salomon, Johannes Aberl, Lada Vukušić +8
The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip…
Telecom light-emitting diodes based on nanoconfined self-assembled silicon-based color centers
Andreas Salomon, Johannes Aberl, Enrique Prado Navarrete +4
Silicon color centers (SiCCs) have recently emerged as potential building blocks for light emitters in Si photonics, quantum emitters with spin storage capabilities, and Si-based q…
All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy
Johannes Aberl, Enrique Prado Navarrete, Merve Karaman +12
Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC…