137 citations · 288 across the 13 of their papers we have counts for
13 papers
Self-Assembled Telecom Color Centers in Silicon and Their Growth Environment
Jacqueline Marböck, Enrique Prado Navarrete, Merve Karaman +6
Artificial atoms based on color centers in silicon (SiCCs) have recently emerged as promising candidates for highly integrable and scalable key components in photonic quantum techn…
Low-density InGaAs/AlGaAs Quantum Dots in Droplet-Etched Nanoholes
Saimon F. Covre Da Silva, Ailton J. Garcia, Maximilian Aigner +10
Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single photons and entangled photons on-demand. Amon…
Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
Christoph Wilflingseder, Johannes Aberl, Enrique Prado Navarette +11
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport…
A group-IV double heterostructure light emitting diode for room temperature gain in Silicon
Andreas Salomon, Johannes Aberl, Lada Vukušić +8
The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip…
Telecom light-emitting diodes based on nanoconfined self-assembled silicon-based color centers
Andreas Salomon, Johannes Aberl, Enrique Prado Navarrete +4
Silicon color centers (SiCCs) have recently emerged as potential building blocks for light emitters in Si photonics, quantum emitters with spin storage capabilities, and Si-based q…
All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy
Johannes Aberl, Enrique Prado Navarrete, Merve Karaman +12
Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC…
Strain-induced dynamic control over the population of quantum emitters in two-dimensional materials
Giuseppe Ronco, Abel Martínez-Suárez, Davide Tedeschi +11
The discovery of quantum emitters (QEs) in two-dimensional materials (2D) has triggered a surge of research to assess their suitability for quantum photonics. While their microscop…
Single SiGe Quantum Dot Emission Deterministically Enhanced in a High-Q Photonic Crystal Resonator
Thanavorn Poempool, Johannes Aberl, Marco Clementi +9
We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) a…
Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots
Jeffrey Schuster, Johannes Aberl, Lada Vukušić +5
The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band ga…
Effect of second order piezoelectricity on excitonic structure of stress-tuned InGaAs/GaAs quantum dots
Petr Klenovský, Petr Steindl, Johannes Aberl +4
We study the effects of the nonlinear piezoelectricity and the In distribution on the exciton energy, the electron-hole electric dipole moment, and the fine-structure splitting in…
Semiconductor quantum dots as an ideal source of polarization entangled photon pairs on-demand: a review
Daniel Huber, Marcus Reindl, Johannes Aberl +2
More than 80 years passed since the first publication on entangled quantum states. In this period of time the concept of spookily interacting quantum states became an emerging fiel…
Strain-Tuning of the Optical Properties of Semiconductor Nanomaterials by Integration onto Piezoelectric Actuators
Javier Martin-Sanchez, Rinaldo Trotta, Antonio Mariscal +13
The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as…
Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect
Johannes Aberl, Petr Klenovský, Johannes S. Wildmann +6
We show that anisotropic biaxial stress can be used to tune the built-in dipole moment of excitons confined in In(Ga)As quantum dots up to complete erasure of its magnitude and inv…