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20172022
most citedVibrational properties of CuInP2S6 across the ferroelectric transition

44 citations · 88 across the 9 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

19 papers · 1 filter

cond-mat.mtrl-sci202244 cited

Vibrational properties of CuInP2S6 across the ferroelectric transition

Sabine N. Neal, Sobhit Singh, Xiaochen Fang +6

In order to explore the properties of a two-sublattice ferroelectric, we measured the infrared and Raman scattering response of CuInP2S6 across the ferroelectric and glassy transit…

cond-mat.mtrl-sci20221 cited

Vibrational fingerprints of ferroelectric hafnia

Shiyu Fan, Sobhit Singh, Xianghan Xu +6

Hafnia (HfO2) is a promising material for emerging chip applications due to its high-k dielectric behaviour, suitability for negative capacitance heterostructures, scalable ferroel…

cond-mat.mtrl-sci2021

Polarization selectivity of aloof-beam electron energy-loss spectroscopy in one-dimensional ZnO nanorods

Yao-Wen Yeh, Sobhit Singh, David Vanderbilt +1

Orientation dependent electronic properties of wurtzite zinc oxide nanorods are characterized by aloof beam electron energy-loss spectroscopy (EELS) carried out in a scanning trans…

cond-mat.mtrl-sci20211 cited

Exploring DFT parameter space with a Bayesian calibration assisted by Markov chain Monte Carlo sampling

Pedram Tavadze, Reese Boucher, Guillermo Avendaño-Franco +7

Density-functional theory is widely used to predict the physical properties of materials. However, it usually fails for strongly correlated materials. A popular solution is to use…

cond-mat.mtrl-sci20216 cited

Polarization switching mechanism in HfO from first-principles lattice mode analysis

Yubo Qi, Sobhit Singh, Karin M. Rabe

In this work, we carry out first-principles calculations and lattice mode analysis to investigate the polarization switching mechanism in HfO. Because the stability of the pola…

cond-mat.mtrl-sci2020

Kinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects

Xianghan Xu, Fei-Ting Huang, Yubo Qi +6

HfO2, a simple binary oxide, holds ultra-scalable ferroelectricity integrable into silicon technology. Polar orthorhombic (Pbc21) form in ultra-thin-films ascribes as the plausible…