50 citations · 177 across the 8 of their papers we have counts for
3 papers · 1 filter
Zero-bias anomaly in nano-scale hole-doped Mott insulators on a triangular silicon surface
Fangfei Ming, Tyler S. Smith, Steven Johnston +2
Adsorption of 1/3 monolayer of Sn on a heavily-doped p-type Si(111) substrate results in the formation of a hole-doped Mott insulator, with electronic properties that are remarkabl…
Atomic and electronic structure of doped Si(111)(2root3x2root3)R30(degrees)-Sn interfaces
Seho Yi, Fangfei Ming, Ying-Tzu Huang +8
The hole doped Si(111)(2root3x2root3)R30(degrees)-Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered by electron tunn…
Realization of a hole-doped Mott insulator on a triangular silicon lattice
Fangfei Ming, Steve Johnston, Daniel Mulugeta +6
The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magneto-res…