activity
20172022
most citedRealization of a hole-doped Mott insulator on a triangular silicon lattice

50 citations · 177 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.supr-con2022★ 20 cited

Monolayer superconductivity and tunable topological electronic structure at the Fe(Te,Se)/Bi2Te3 interface

Robert G. Moore, Tyler Smith, Xiong Yao +6

The interface between two-dimensional topological Dirac states and an s-wave superconductor is expected to support Majorana bound states that can be used for quantum computing appl…

cond-mat.mtrl-sci2022★ 1 cited

Surface-Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi2Te4 Thin Films

Alessandro R. Mazza, Jason Lapano, Harry M. Meyer +11

Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applic…

quant-ph2022★ 26 cited

Quantum Computation of Reactions on Surfaces Using Local Embedding

Tanvi P. Gujarati, Mario Motta, Triet Nguyen Friedhoff +9

Modeling electronic systems is an important application for quantum computers. In the context of materials science, an important open problem is the computational description of ch…

cond-mat.supr-con2019★ 47 cited

Superconductivity in a hole-doped Mott-insulating triangular adatom layer on a silicon surface

Xuefeng Wu, Fangfei Ming, Tyler S. Smith +5

Adsorption of one-third monolayer of Sn on an atomically-clean Si(111) substrate produces a two-dimensional triangular adatom lattice with one unpaired electron per site. This dilu…

cond-mat.mes-hall2019★ 9 cited

Coupled Sublattice Melting and Charge-Order Transition in Two Dimensions

Tyler S. Smith, Fangfei Ming, Daniel González Trabada +5

Two-dimensional melting is one of the most fascinating and poorly understood phase transitions in nature. Theoretical investigations often point to a two-step melting scenario invo…

cond-mat.mes-hall2017★ 15 cited

Zero-bias anomaly in nano-scale hole-doped Mott insulators on a triangular silicon surface

Fangfei Ming, Tyler S. Smith, Steven Johnston +2

Adsorption of 1/3 monolayer of Sn on a heavily-doped p-type Si(111) substrate results in the formation of a hole-doped Mott insulator, with electronic properties that are remarkabl…