101 citations · 343 across the 11 of their papers we have counts for
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Cataloguing MoSiN and WSiN van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications
Che Chen Tho, Chenjiang Yu, Qin Tang +14
Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventiona…
Tunable electronic properties and band alignments of MoSiN/GaN and MoSiN/ZnO van der Waals heterostructures
Jin Quan Ng, Qingyun Wu, L. K. Ang +1
Van de Waals heterostructures (VDWH) is an emerging strategy to engineer the electronic properties of two-dimensional (2D) material systems. Motivated by the recent discovery of Mo…
Semiconductor-to-metal transition in bilayer MoSiN and WSiN with strain and electric field
Qingyun Wu, Liemao Cao, Yee Sin Ang +1
With exceptional electrical and mechanical properties and at the same time air-stability, layered MoSi2N4 has recently draw great attention. However, band structure engineering via…
Tunable magnetization relaxation of Fe_{2}Cr_{1-x}Co_{x}Si half-metallic Heusler alloys by band structure engineering
Shikun He, Yifan Liu, Yuhong Zheng +8
We report a systematic investigation on the magnetization relaxation properties of iron-based half-metallic Heusler alloy FeCrCo_Si (FCCS) thin films using broad…
Magnetic Properties of Transition-Metal Adsorbed ot-Phosphorus Monolayer: A First-principles and Monte Carlo Study
Zengyao Wang, Qingyun Wu, Lei Shen
Using the first-principles and Monte Carlo methods, here we systematically study magnetic properties of monolayer octagonal-tetragonal phosphorus with 3d transition-metal (TM) adat…
Efficient spin injection into graphene through a tunnel barrier: overcoming the spin conductance mismatch
Qingyun Wu, Lei Shen, Zhaoqiang Bai +4
Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barr…
Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction
Zhaoqiang Bai, Lei Shen, Yongqing Cai +4
Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polar…