most citedMicroscopic Mechanism of Carbon Annihilation upon SiC Oxidation due to Phosphorous Treatment: Density-Functional Calculations Combined with Ion Mass Spectrometry

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eess.SP2017★ 2 cited

High-Speed Gate Driver Using GaN HEMTs for 20-MHz Hard Switching of SiC MOSFETs

Takafumi Okuda, Takashi Hikihara

In this paper, we investigated a gate driver using a GaN HEMT push-pull configuration for the high-frequency hard switching of a SiC power MOSFET. Low on-resistance and low input c…