2 citations · 2 across the 1 of their papers we have counts for
2 papers
eess.SP2017★ 2 cited
High-Speed Gate Driver Using GaN HEMTs for 20-MHz Hard Switching of SiC MOSFETs
Takafumi Okuda, Takashi Hikihara
In this paper, we investigated a gate driver using a GaN HEMT push-pull configuration for the high-frequency hard switching of a SiC power MOSFET. Low on-resistance and low input c…
cond-mat.mtrl-sci2017
Microscopic Mechanism of Carbon Annihilation upon SiC Oxidation due to Phosphorous Treatment: Density-Functional Calculations Combined with Ion Mass Spectrometry
Takuma Kobayashi, Yu-ichiro Matsushita, Takafumi Okuda +2
We report first-principles static and dynamic calculations that clarify the microscopic mechanism of carbon annihilation due to phosphorous treatment upon oxidation of silicon carb…