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physics.app-ph2020★ 1 cited
UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction
Swanand V. Solanke, Rohith Soman, Muralidharan Rangarajan +2
In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating α-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOC…
physics.app-ph2018
Multi-layer MoS2/GaN UV-Visible photodetector with observation of MoS2 band edge in spectral responsivity
Swanand Solanke, Shashwat Rathakanthiwar, 1Anisha Kalra +3
We report on the demonstration of MoS2/GaN UV-visible photodetectors with high spectral responsivity both in UV and in visible regions as well as the observation of MoS2 band-edge…