39 citations · 40 across the 2 of their papers we have counts for
3 papers
UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction
Swanand V. Solanke, Rohith Soman, Muralidharan Rangarajan +2
In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating α-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOC…
Multi-layer MoS2/GaN UV-Visible photodetector with observation of MoS2 band edge in spectral responsivity
Swanand Solanke, Shashwat Rathakanthiwar, 1Anisha Kalra +3
We report on the demonstration of MoS2/GaN UV-visible photodetectors with high spectral responsivity both in UV and in visible regions as well as the observation of MoS2 band-edge…
Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces
Hareesh Chandrasekar, K N Bhat, Muralidharan Rangarajan +2
The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to…