activity
20152018
most citedA new Regime of Pauli-Spin Blockade

4 citations · 9 across the 4 of their papers we have counts for

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Showing 2018Show all

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physics.app-ph2018★ 2 cited

Effect of device design on charge offset drift in Si/SiO single electron devices

Binhui Hu, Erick D. Ochoa, Daniel Sanchez +3

We have measured the low-frequency time instability known as charge offset drift of Si/SiO single electron devices (SEDs) with and without an overall poly-Si top gate. We find…