2 papers
physics.app-ph2018
Effect of device design on charge offset drift in Si/SiO single electron devices
Binhui Hu, Erick D. Ochoa, Daniel Sanchez +3
We have measured the low-frequency time instability known as charge offset drift of Si/SiO single electron devices (SEDs) with and without an overall poly-Si top gate. We find…
cond-mat.mtrl-sci2017
Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers
Xiqiao Wang, Joseph A. Hagmann, Pradeep Namboodiri +8
Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision.…