4 citations · 9 across the 4 of their papers we have counts for
4 papers
Effect of device design on charge offset drift in Si/SiO single electron devices
Binhui Hu, Erick D. Ochoa, Daniel Sanchez +3
We have measured the low-frequency time instability known as charge offset drift of Si/SiO single electron devices (SEDs) with and without an overall poly-Si top gate. We find…
Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers
Xiqiao Wang, Joseph A. Hagmann, Pradeep Namboodiri +8
Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision.…
Valley blockade in a silicon double quantum dot
Justin K. Perron, Michael J. Gullans, Jacob M. Taylor +2
Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies ha…
A new Regime of Pauli-Spin Blockade
Justin K. Perron, M. D. Stewart, Neil M. Zimmerman
Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin…