3 citations · 5 across the 5 of their papers we have counts for
5 papers
Beyond sensitivity: mechanism-resolved error budgets for designing quantum sensors
Nima Leclerc, Marco Capelli, Kevin James Rietwyk +14
Quantum sensors are specified by a headline sensitivity, yet applications also demand accuracy and reliability. The dominant limiter of one metric is often known, but no method res…
Chromium-Doped Bismuth Antimony Telluride for Future Quantum Hall Resistance Standards
Albert F. Rigosi Linsey K. Rodenbach, Alireza R. Panna, Shamith U. Payagala +10
Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need…
Geometric interference in a high-mobility graphene annulus p-n junction device
Son T. Le, Albert F. Rigosi, Joseph A. Hagmann +3
The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance pat…
Strong equilibration of Landau levels edge-states at the graphene edge
Son T. Le, Joseph A. Hagmann, Nikolai Klimov +4
We present the results of an experimental study of the interaction of quantized Landau level (LL) edge-states at the physical edge of graphene by using a graphene pn junction devic…
Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers
Xiqiao Wang, Joseph A. Hagmann, Pradeep Namboodiri +8
Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision.…