activity
20172025
most citedDirect observation of anyonic braiding statistics at the =1/3 fractional quantum Hall state

520 citations · 801 across the 13 of their papers we have counts for

collaborators
Showing 2017Show all

5 papers · 1 filter

cond-mat.mes-hall2017★ 28 cited

Possible nematic to smectic phase transition in a two-dimensional electron gas at half-filling

Q. Qian, J. Nakamura, S. Fallahi +2

Liquid crystalline phases of matter permeate nature and technology, with examples ranging from cell membranes to liquid-crystal displays. Remarkably, electronic liquid crystal phas…

cond-mat.mes-hall2017★ 5 cited

Impact of silicon doping on low frequency charge noise and conductance drift in GaAs/AlGaAs nanostructures

S. Fallahi, J. R. Nakamura, G. C. Gardner +2

We present measurements of low frequency charge noise and conductance drift in modulation doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy in which the silicon do…

cond-mat.mes-hall2017★ 16 cited

Optimization of edge state velocity in the integer quantum Hall regime

Harshad Sahasrabudhe, Bozidar Novakovic, James Nakamura +5

Observation of interference in the quantum Hall regime may be hampered by a small edge state velocity due to finite phase coherence time. Therefore designing two quantum point cont…

cond-mat.mes-hall2017★ 33 cited

Quantum Lifetime in Ultra-High Quality GaAs Quantum Wells: Relationship to and Impact of Density Fluctuations

Qi Qian, James R. Nakamura, Saeed Fallahi +6

We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses l…

cond-mat.mes-hall2017★ 7 cited

High temperature resistivity measured at ν = 5/2 as a predictor of 2DEG quality in the N=1 Landau level

Qi Qian, James R. Nakamura, Saeed Fallahi +3

We report a high temperature (T = 0.3K) indicator of the excitation gap at the filling factor fractional quantum Hall state in ultra-high quality AlGaAs/GaAs two…