activity
20172022
most citedDirect evidence of ferromagnetism in MnSb2Te4

36 citations · 36 across the 3 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

7 papers · 1 filter

cond-mat.mtrl-sci2021

Origins of electronic bands in antiferromagnetic topological insulator MnBiTe

Chenhui Yan, Sebastian Fernandez-Mulligan, Ruobing Mei +7

Despite the rapid progress in understanding the first intrinsic magnetic topological insulator MnBiTe, its electronic structure remains a topic under debates. Here we perfo…

cond-mat.mtrl-sci202136 cited

Direct evidence of ferromagnetism in MnSb2Te4

Wenbo Ge, Paul M. Sass, Jiaqiang Yan +3

We report the magnetic imaging of ferromagnetic domains in the van der Waals single crystal MnSb2Te4 from two different sources using cryogenic magnetic force microscopy. The magne…

cond-mat.mtrl-sci2020

Topological Magnetoelectric Switching on the Atomic Scale

Igor Altfeder, Robert C. Walko, Seng Huat Lee +1

Intrinsic magnetic topological insulators from MnBi2Te4 family promise realization of axion insulator, a theoretically predicted state of matter capable to mutually convert electri…

cond-mat.mtrl-sci2020

Influence of magnetic ordering on the optical response of the antiferromagnetic topological insulator MnBiTe

M. Köpf, J. Ebad-Allah, S. Lee +2

The layered topological insulator MnBiTe has attracted great interest recently due to its intrinsic antiferromagnetic order, potentially hosting various topological phases.…

cond-mat.mtrl-sci2020

Two phase transitions driven by surface electron-doping in WTe

Antonio Rossi, Giacomo Resta, Seng Huat Lee +6

WTe is a multifunctional quantum material exhibiting numerous emergent phases in which tuning of the carrier density plays an important role. Here we demonstrate two non-monoto…

cond-mat.mtrl-sci2019

Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3

Justin R. Rodriguez, William Murray, Kazunori Fujisawa +11

Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of α-In2Se3 as the channel material as opposed to the gate…