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cond-mat.mes-hall2026
Correlation enhanced resistance hysteresis near half filling in MoS2/WSe2 heterobilayer
Yong Chen, Weikang Zhang, Meizhen Huang +11
Ferroelectricity, typically arising from ionic displacements in noncentrosymmetric lattices, enabling applications in memory devices and sensors. Recent advances in two-dimensional…
cond-mat.mes-hall2017★ 11 cited
Observation of A Raman mode splitting in few layers black phosphorus encapsulated with hexagonal boron nitride
J. M. Urban, M. Baranowski, A. Surrente +8
We investigate the impact of the encapsulation with hexagonal boron nitride (h-BN) on the Raman spectrum of few layer black phosphorus. The encapsulation results in a significant r…