Tailoring Magnetic Anisotropy in Cr${}_2$Ge${}_2$Te${}_6$ by Electrostatic Gating

Ivan. A. Verzhbitskiy, Hidekazu Kurebayashi, Haixia Cheng +4

Electrical control of magnetism of a ferromagnetic semiconductor offers exciting prospects for future spintronic devices for processing and storing information. Here, we report obs…