149 citations · 183 across the 5 of their papers we have counts for
5 papers
Ultralow p-type contact resistance for ultra-nanoscaled 2D-materials transistors
Ying Xiong, Tong Su, Qiang Li +3
High contact resistance is one of the main bottlenecks for practical two-dimensional (2D) materials transistors, especially for p-type transistors and future 2D ultra-nanoscaled (s…
Computational Design of Two-Dimensional MoSiN Family Field-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes
Che Chen Tho, Zongmeng Yang, Shibo Fang +9
Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel mater…
Pressure-Driven Metallicity in Ångström-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2
Shuhua Wang, Shibo Fang, Qiang Li +8
Recent fabrication of two-dimensional (2D) metallic bismuth (Bi) via van der Waals (vdW) squeezing method opens a new avenue to ultrascaling metallic materials into the ångström-th…
Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve and universal reversible logic gate
Yee Sin Ang, Shengyuan A. Yang, C. Zhang +2
Despite much anticipation of valleytronics as a candidate to replace the ageing CMOS-based information processing, its progress is severely hindered by the lack of practical ways t…
Nonlocal transistor based on pure crossed Andreev reflection in a EuO-graphene/superconductor hybrid structure
Yee Sin Ang, L. K. Ang, C. Zhang +1
We study the interband transport in a superconducting device composed of graphene with EuO-induced exchange interaction. We show that pure crossed Andreev reflection can be generat…