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physics.app-ph2020
Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN: effects of surface electric fields
T. Auzelle, M. Azadmand, T. Flissikowski +8
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formatio…
physics.app-ph2019
Metal Droplet Effects on the Composition of Ternary Nitrides
Mani Azadmand, Stefano Vichi, Sergio Bietti +7
We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong red…