6 citations · 7 across the 5 of their papers we have counts for
5 papers
Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN: effects of surface electric fields
T. Auzelle, M. Azadmand, T. Flissikowski +8
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formatio…
Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films
Mani Azadmand, Tomas Auzelle, Jonas Lähnemann +7
We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionall…
Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductors Nanowires
L. Jaloustre, S. Le-Denmat, T. Auzelle +4
Piezoelectric semiconductor III-Nitride nanostructures have received increasing interest as an alternative material for energy harvesters, sensors, and self-sustainable electronics…
Metal Droplet Effects on the Composition of Ternary Nitrides
Mani Azadmand, Stefano Vichi, Sergio Bietti +7
We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong red…
Droplet Controlled Growth Dynamics in Plasma-Assisted Molecular Beam Epitaxy of In(Ga)N Materials
Mani Azadmand, Luca Barabani, Sergio Bietti +7
We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450°C). We f…