672 citations · 1.2k across the 16 of their papers we have counts for
10 papers · 1 filter
Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces
Mylène Sauty, Jean-Philippe Banon, Nicolas M. S. Lopes +4
The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. We theoretically predict t…
Deep-level structure of the spin-active recombination center in dilute nitrides
A. C. Ulibarri, C. T. K. Lew, S. Q. Lim +5
A Gallium interstitial defect (Ga) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAsN dilute nitride semiconduc…
A systematic study of spin-dependent recombination in GaAsN as a function of nitrogen content
A. C. Ulibarri, R. Kothari, A. Garcia +5
A systematic study of spin-dependent recombination (SDR) under steady-state optical pumping conditions in dilute nitride semiconductors as a function of nitrogen content is reporte…
Nanoscale mapping of sub-gap electroluminescence from step-bunched, oxidized 4H-SiC surfaces
Natalia Alyabyeva, Jacques Ding, Mylène Sauty +7
Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon fac…
Light-tunable optical cell manipulation via photoactive azobenzene-containing thin film bio-substrate
Olivier Lefebvre, Mireille Lambert, Clotilde Randriamampita +5
In-vivo, real-time study of the local and collective cellular biomechanical responses requires the fine and selective manipulation of the cellular environment. One innovative pathw…
Ultrafast electrons dynamics reveal the high potential of InSe for hot carrier optoelectronics
Zhesheng Chen, Christine Giorgetti, Jelena Sjakste +9
We monitor the dynamics of hot carriers in InSe by means of two photons photoelectron spectroscopy (2PPE). The electrons excited by photons of 3.12 eV experience a manifold relaxat…
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
Chi-Kang Li, Marco Piccardo, Li-Shuo Lu +7
This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape…
Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers
Marco Piccardo, Chi-Kang Li, Yuh-Renn Wu +7
Urbach tails in semiconductors are often associated to effects of compositional disorder. The Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased ph…
A Closer Look at the Light Induced Changes in the Visco-elastic Properties of Azobenze-Containing Polymers by Statistical Nanoindentation
Luca Sorelli, Filippo Fabbri, Jessy Frech-Baronet +7
The mechanical properties of azobenzene-containing polymer films are statistically measured by instrumented nanoindentation experiment in the dark and under illumination in the abs…
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
Justin Iveland, Lucio Martinelli, Jacques Peretti +2
We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated InGaN/GaN light emitting diode (LED) under electrical injection. Electro…