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cond-mat.mtrl-sci2025
Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces
Mylène Sauty, Jean-Philippe Banon, Nicolas M. S. Lopes +4
The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. We theoretically predict t…
cond-mat.mtrl-sci2018
Ultrafast electrons dynamics reveal the high potential of InSe for hot carrier optoelectronics
Zhesheng Chen, Christine Giorgetti, Jelena Sjakste +9
We monitor the dynamics of hot carriers in InSe by means of two photons photoelectron spectroscopy (2PPE). The electrons excited by photons of 3.12 eV experience a manifold relaxat…