activity
20172024
most citedPressure dependence of direct optical transitions in ReS2 and ReSe2

53 citations · 220 across the 20 of their papers we have counts for

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Showing 2019Show all

6 papers · 1 filter

cond-mat.mtrl-sci2019★ 1 cited

GaSbBi alloys and heterostructures: fabrication and properties

O. Delorme, L. Cerutti, R. Kudrawiec +6

Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antim…

cond-mat.mes-hall2019★ 49 cited

Phase Transition Induced Carrier Mass Enhancement in 2D Ruddlesden-Popper Perovskites

Michal Baranowski, Szymon J. Zelewski, Mikael Kepenekian +10

There is a variety of possible ways to tune the optical properties of 2D perovskites, though the mutual dependence between different tuning parameters hinders our fundamental under…

cond-mat.mes-hall2019★ 6 cited

Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells

Michał Jarema, Marta Gładysiewicz, Łukasz Janicki +5

In this work the broadening of interband transitions in InGaN/GaN quantum wells (QWs) resulting from structural inhomogeneities is analyzed. The role of polarization-induced electr…

cond-mat.mtrl-sci2019★ 14 cited

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, localization of states

Maciej P. Polak, Robert Kudrawiec, Oleg Rubel

The electronic band structure of Ga(PAsN) with a few percent of nitrogen is calculated in the whole composition of Ga(PAs) host using the state-of-the-art density functional method…

cond-mat.mes-hall2019★ 4 cited

On intrinsic Stokes shift in wide GaN/AlGaN polar quantum wells

M. Jarema, M. Gladysiewicz, E. Zdanowicz +3

The interpretation of electromodulated reflectance (ER) spectra of polar quantum wells (QWs) is difficult even for homogeneous structures because of the built-in electric field. In…

cond-mat.mtrl-sci2019★ 23 cited

Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping

Slawomir Prucnal, Yonder Berencén, Mao Wang +19

Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate…