53 citations · 220 across the 20 of their papers we have counts for
14 papers · 1 filter
Electronic and structural properties of group IV materials and their polytypes
Jakub Ziembicki, Paweł Scharoch, Maciej P. Polak +2
Nanotechnology's impact on semiconductor industry advancement, particularly through the engineering of nanostructures like nanowires, opens new possibilities for material functiona…
The Defects Genome of 2D Janus Transition Metal Dichalcogenides
Mohammed Sayyad, Jan Kopaczek, Carmem M. Gilardoni +9
Two-dimensional (2D) Janus Transition Metal Dichalcogenides (TMDs) have attracted much interest due to their exciting quantum properties arising from their unique two-faced structu…
Material gain and eight-band k.p description for selected perovskites
Krzysztof Gawarecki, Michał Wiśniewski, Maciej Polak +2
In this work, we present a ready-to-use symmetry invariant expansion form of the eight-band k.p Hamiltonian for inorganic and organic metal halide perovskites (CsPbX and MAPbX$…
Optical markers of magnetic phase transition in CrSBr
W. M. Linhart, M. Rybak, M. Birowska +6
Here, we investigate the role of the interlayer magnetic ordering of CrSBr in the framework of calculations and by using optical spectroscopy techniques. These…
Stress-Tuned Optical Transitions in Layered 1T-MX2 (M= Hf, Zr, Sn; X= S, Se) Crystals
Miłosz Rybak, Tomasz Woźniak, Magdalena Birowska +5
Optical measurements under externally applied stresses allow us to study the materials' electronic structure by comparing the pressure evolution of optical peaks obtained from expe…
Strong substrate strain effects in multilayered WS2 revealed by high-pressure optical measurements
Robert Oliva, Tomasz Woźniak, Paulo E. Faria Junior +5
The optical properties of two-dimensional materials can be effectively tuned by strain induced from a deformable substrate. In the present work we combine first-principles calculat…
The effect of isovalent doping on the electronic band structure of group IV semiconductors
Maciej P Polak, Paweł Scharoch, Robert Kudrawiec
The band gap engineering of group IV semiconductors has not been well explored theoretically and experimentally, except for SiGe. Recently, GeSn has attracted much attention due to…
Modified Band Alignment Method to Obtain Hybrid Functional Accuracy from Standard DFT: Application to Defects in Highly Mismatched III-V:Bi Alloys
Maciej P. Polak, Robert Kudrawiec, Ryan Jacobs +2
This paper provides an accurate theoretical defect energy database for pure and Bi-containing III-V (III-V:Bi) materials and investigates efficient methods for high-throughput defe…
Spectroscopy and structural investigation of iron phosphorus trisulfide -- FePS
Adam K. Budniak, Szymon J. Zelewski, Magdalena Birowska +6
Lamellar structures of transition metal phosphorus trisulfides possess strong intralayer bonding, albeit adjacent layers are held by weak van der Waals interactions. Those compound…
GaSbBi alloys and heterostructures: fabrication and properties
O. Delorme, L. Cerutti, R. Kudrawiec +6
Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antim…
Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, localization of states
Maciej P. Polak, Robert Kudrawiec, Oleg Rubel
The electronic band structure of Ga(PAsN) with a few percent of nitrogen is calculated in the whole composition of Ga(PAs) host using the state-of-the-art density functional method…
Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
Slawomir Prucnal, Yonder Berencén, Mao Wang +19
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate…
Pressure dependence of direct optical transitions in ReS2 and ReSe2
R. Oliva, M. Laurien, F. Dybala +5
We present an experimental and theoretical study of the electronic band structure of ReS2 and ReSe2 at high hydrostatic pressures. The experiments are performed by photoreflectance…
Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures
L. Janicki, G. Kunert, M. Sawicki +5
The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of…