62 citations · 237 across the 10 of their papers we have counts for
10 papers
Interaction-dependent anisotropy of fractional quantum Hall states
Akshay Krishna, Fan Chen, Matteo Ippoliti +1
A fractional quantum Hall (FQH) system with broken rotational symmetry exploits its geometric degree of freedom to minimize its ground state energy. The mass anisotropy of bare par…
Hole Mobility Model for Si Double-Gate Junctionless Transistors
Fan Chen, Kangliang Wei, Wei E. I. Sha +1
In this work, a physics based model is developed to calculate the hole mobility of ultra-thin-body double-gate junctionless transistors. Six-band Schrödinger equation an…
Switching Mechanism and the Scalability of vertical-TFETs
Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan +2
In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by…
Dramatic Impact of Dimensionality on the Electrostatics of PN Junctions
Hesameddin Ilatikhameneh, Tarek Ameen, Fan Chen +3
Low dimensional material systems provide a unique set of properties useful for solid-state devices. The building block of these devices is the PN junction. In this work, we present…
Impact of Dimensionality on PN Junctions
Hesameddin Ilatikhameneh, Tarek Ameen, Fan Chen +3
Low dimensional material systems provide a unique set of properties useful for solid-state devices. The building block of these devices is the PN junction. In this work, we present…
Transport in vertically stacked hetero-structures from 2D materials
Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan +3
In this work, the transport of tunnel field-effect transistor (TFET) based on vertically stacked hereto-structures from 2D transition metal dichalcogenide (TMD) materials is invest…
Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene
Fan W. Chen, Hesameddin Ilatikhameneh, Tarek A. Ameen +2
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D ma…
First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding
Yaohua Tan, Fan Chen, Avik Ghosh
We explore the band structure and ballistic electron transport in twisted bilayer using Density Functional Theory (DFT). The sphagetti like bands are unfolded to g…
Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
Fan W. Chen, Hesameddin Ilatikhameneh, Gerhard Klimeck +2
A bilayer graphene based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon TFETs in which the edge states deter…
In-surface confinement of topological insulator nanowire surface states
Fan W. Chen, Luis A. Jauregui, Yaohua Tan +4
The bandstructures of [110] and [001] Bi2Te3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assum…