activity
20102023
most citedRecord Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

155 citations · 342 across the 14 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

7 papers · 1 filter

cond-mat.mtrl-sci2022★ 3 cited

Spectral Current Density and Responsivity Scaling for Fourier Transform Photocurrent Spectroscopy

Jan Kunc, Bohdan Morzhuk, Mykhailo Shestopalov +2

We propose and experimentally verify two methods to scale arbitrary units to photocurrent spectral density (A/eV) in Fourier Transform Photocurrent (FTPC) spectroscopy. We also pro…

cond-mat.mtrl-sci2018

Intercalation of hydrogen in the SiC/epitaxial graphene interface

Jan Kunc, Martin Rejhon, Pavel Hlídek

We have measured optical absorption in mid-infrared spectral range on hydrogen intercalated epitaxial graphene grown on silicon face of SiC. We have used attenuated total reflectio…

cond-mat.mtrl-sci2017★ 6 cited

The electroluminescent properties based on bias polarity of the epitaxial graphene/aluminium SiC junction

M. Rejhon, J. Franc, V. Dědič +2

We investigated the electroluminescent properties of the epitaxial graphene/SiC junction. The temperature and current dependence of electroluminescence from the epitaxial graphene/…

cond-mat.mtrl-sci2017★ 36 cited

Effect of residual gas composition on epitaxial graphene growth on SiC

Jan Kunc, Martin Rejhon, Eduard Belas +3

In recent years, graphene growth optimization has been one of the key routes towards large-scale, high-quality graphene production. We have measured in-situ residual gas content du…

cond-mat.mtrl-sci2013★ 14 cited

Wafer bonding solution to epitaxial graphene - silicon integration

Rui Dong, Zelei Guo, James Palmer +7

The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon,…

cond-mat.mtrl-sci2013★ 29 cited

A method to extract pure Raman spectrum of epitaxial graphene on SiC

Jan Kunc, Yike Hu, James Palmer +2

A method is proposed to extract pure Raman spectrum of epitaxial graphene on SiC by using a Non-negative Matrix Factorization. It overcomes problems of negative spectral intensity…

cond-mat.mtrl-sci2013★ 155 cited

Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

Zelei Guo, Rui Dong, Partha Sarathi Chakraborty +9

The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene…