activity
20102023
most citedRecord Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

155 citations · 342 across the 14 of their papers we have counts for

collaborators

14 papers

physics.optics2023

Investigation of internal electric fields in graphene/6H-SiC under illumination by Pockels effect

Vaclav Dedic, Jakub Sanitrak, Tomas Fridrisek +4

In this paper, we introduce a method for mapping profiles of internal electric fields in birefringent crystals based on the electro-optic Pockels effect and measuring phase differe…

cond-mat.mes-hall2023★ 1 cited

Plasmon-plasmon interaction and the role of buffer in epitaxial graphene micro-flakes

Mykhailo Shestopalov, Václav Dědič, Martin Rejhon +7

We investigate the origin of the translational symmetry breaking in epitaxially grown single-layer graphene. Despite the surface morphology of homogeneous graphene films influenced…

cond-mat.mtrl-sci2022★ 3 cited

Spectral Current Density and Responsivity Scaling for Fourier Transform Photocurrent Spectroscopy

Jan Kunc, Bohdan Morzhuk, Mykhailo Shestopalov +2

We propose and experimentally verify two methods to scale arbitrary units to photocurrent spectral density (A/eV) in Fourier Transform Photocurrent (FTPC) spectroscopy. We also pro…

cond-mat.mtrl-sci2018

Intercalation of hydrogen in the SiC/epitaxial graphene interface

Jan Kunc, Martin Rejhon, Pavel Hlídek

We have measured optical absorption in mid-infrared spectral range on hydrogen intercalated epitaxial graphene grown on silicon face of SiC. We have used attenuated total reflectio…

cond-mat.mtrl-sci2017★ 6 cited

The electroluminescent properties based on bias polarity of the epitaxial graphene/aluminium SiC junction

M. Rejhon, J. Franc, V. Dědič +2

We investigated the electroluminescent properties of the epitaxial graphene/SiC junction. The temperature and current dependence of electroluminescence from the epitaxial graphene/…

physics.ins-det2017★ 3 cited

Efficient Charge Collection in Coplanar Grid Radiation Detectors

Jan Kunc, Petr Praus, Eduard Belas +3

We have modeled laser-induced transient current waveforms in radiation coplanar grid detectors. Poisson's equation has been solved by finite element method and currents induced by…

cond-mat.mtrl-sci2017★ 36 cited

Effect of residual gas composition on epitaxial graphene growth on SiC

Jan Kunc, Martin Rejhon, Eduard Belas +3

In recent years, graphene growth optimization has been one of the key routes towards large-scale, high-quality graphene production. We have measured in-situ residual gas content du…

cond-mat.str-el2014★ 26 cited

Fractional Quantum Hall Effect in a Diluted Magnetic Semiconductor

C. Betthausen, P. Giudici, A. Iankilevitch +9

We report the observation of the fractional quantum Hall effect in the lowest Landau level of a two-dimensional electron system (2DES), residing in the diluted magnetic semiconduct…

cond-mat.mes-hall2014★ 17 cited

Controlled epitaxial graphene growth within amorphous carbon corrals

James Palmer, Jan Kunc, Yike Hu +4

Structured growth of high quality graphene is necessary for technological development of carbon based electronics. Specifically, control of the bunching and placement of surface st…

cond-mat.mtrl-sci2013★ 14 cited

Wafer bonding solution to epitaxial graphene - silicon integration

Rui Dong, Zelei Guo, James Palmer +7

The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon,…

cond-mat.mtrl-sci2013★ 29 cited

A method to extract pure Raman spectrum of epitaxial graphene on SiC

Jan Kunc, Yike Hu, James Palmer +2

A method is proposed to extract pure Raman spectrum of epitaxial graphene on SiC by using a Non-negative Matrix Factorization. It overcomes problems of negative spectral intensity…

cond-mat.mtrl-sci2013★ 155 cited

Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

Zelei Guo, Rui Dong, Partha Sarathi Chakraborty +9

The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene…

cond-mat.mes-hall2010★ 39 cited

Fractional quantum Hall effect in CdTe

B. A. Piot, J. Kunc, M. Potemski +6

The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3…

cond-mat.mes-hall2010★ 13 cited

Enhancement of the spin-gap in fully occupied two-dimensional Landau levels

J. Kunc, K. Kowalik, F. J. Teran +7

Polarization-resolved magneto-luminescence, together with simultaneous magneto-transport measurements, have been performed on a two-dimensional electron gas (2DEG) confined in CdTe…