205 citations · 350 across the 8 of their papers we have counts for
5 papers · 1 filter
Modeling Transient Negative Capacitance in Steep-Slope FeFETs
Borna Obradovic, Titash Rakshit, Ryan Hatcher +2
We report on measurements and modeling of FE HfZrO/SiO2 Ferroelectric-Dielectric (FE-DE) FETs which indicate that many of the phenomena attributed to Negative Capacitance can be ex…
Modeling of Negative Capacitance of Ferroelectric Capacitors as a Non-Quasi Static Effect
Borna Obradovic, Titash Rakshit, Ryan Hatcher +2
Pulse-based studies of ferroelectric capacitor systems have been used by several groups to experimentally probe the mechanisms of apparent negative capacitance. In this paper, the…
Silicon-based molecular electronics
T. Rakshit, G-C. Liang, A. W. Ghosh +1
Molecular electronics on silicon has distinct advantages over its metallic counterpart. We describe a theoretical formalism for transport through semiconductor-molecule heterostruc…
Gating of a molecular transistor: Electrostatic and Conformational
Avik W. Ghosh, Titash Rakshit, Supriyo Datta
We derive a general result that can be used to evaluate and compare the transconductance of different field-effect mechanisms in molecular transistors, both electrostatic and confo…
Current-voltage Characteristics of Molecular Conductors: Two versus Three Terminal
Prashant Damle, Titash Rakshit, Magnus Paulsson +1
This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFE…