most citedModeling of Negative Capacitance of Ferroelectric Capacitors as a Non-Quasi Static Effect

4 citations · 7 across the 3 of their papers we have counts for

collaborators

5 papers

cs.ET2018

High-Accuracy Inference in Neuromorphic Circuits using Hardware-Aware Training

Borna Obradovic, Titash Rakshit, Ryan Hatcher +2

Neuromorphic Multiply-And-Accumulate (MAC) circuits utilizing synaptic weight elements based on SRAM or novel Non-Volatile Memories (NVMs) provide a promising approach for highly e…

cond-mat.mes-hall2018

Modeling Transient Negative Capacitance in Steep-Slope FeFETs

Borna Obradovic, Titash Rakshit, Ryan Hatcher +2

We report on measurements and modeling of FE HfZrO/SiO2 Ferroelectric-Dielectric (FE-DE) FETs which indicate that many of the phenomena attributed to Negative Capacitance can be ex…

cond-mat.mes-hall20184 cited

Modeling of Negative Capacitance of Ferroelectric Capacitors as a Non-Quasi Static Effect

Borna Obradovic, Titash Rakshit, Ryan Hatcher +2

Pulse-based studies of ferroelectric capacitor systems have been used by several groups to experimentally probe the mechanisms of apparent negative capacitance. In this paper, the…

cs.ET2017

A Multi-Bit Neuromorphic Weight Cell using Ferroelectric FETs, suitable for SoC Integration

Borna Obradovic, Titash Rakshit, Ryan Hatcher +4

A multi-bit digital weight cell for high-performance, inference-only non-GPU-like neuromorphic accelerators is presented. The cell is designed with simplicity of peripheral circuit…

physics.app-ph20173 cited

Parasitic Bipolar Leakage in III-V FETs: Impact of Substrate Architecture

Borna Obradovic, Titash Rakshit, Wei-E Wang +4

InGaAs-based Gate-all-Around (GAA) FETs with moderate to high In content are shown experimentally and theoretically to be unsuitable for low-leakage advanced CMOS nodes. The primar…