Yann in ’t Veld

collaborators

2 papers

cond-mat.mes-hall2025

Quasiparticle gap renormalization driven by internal and external screening in a WS $_{2}$ device

Chakradhar Sahoo, Yann in 't Veld, Alfred J. H. Jones +11

The electronic band gap of a two-dimensional semiconductor within a device architecture is sensitive to variations in screening properties of adjacent materials in the device and t…

cond-mat.mtrl-sci2025

Persistence of charge ordering instability to Coulomb engineering in the excitonic insulator candidate TiSe $_{2}$

Sebastian Buchberger, Yann in 't Veld, Akhil Rajan +11

TiSe $_{2}$ has long been considered one of the best candidate materials to host the elusive excitonic insulator (EI) phase. However, a finite coupling to the lattice can generically…

Quasiparticle gap renormalization driven by internal and external screening in a WS2​ device

Persistence of charge ordering instability to Coulomb engineering in the excitonic insulator candidate TiSe2​

Quasiparticle gap renormalization driven by internal and external screening in a WS $_{2}$ device

Persistence of charge ordering instability to Coulomb engineering in the excitonic insulator candidate TiSe $_{2}$