activity
19952012
most citedExperimental Separation of Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells

356 citations · 1.3k across the 22 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

8 papers · 1 filter

cond-mat.mtrl-sci2012★ 28 cited

Enhanced Resolution of Poly-(Methyl Methacrylate) Electron Resist by Thermal Processing

Nima Arjmandi, Liesbet Lagae, Gustaaf Borghs

Granular nanostructure of electron beam resist had limited the ultimate resolution of electron beam lithography. We report a thermal process to achieve a uniform and homogeneous am…

cond-mat.mtrl-sci2007★ 3 cited

A Temperature Analysis of High-power AlGaN/GaN HEMTs

J. Das, H. Oprins, H. Ji +6

Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN hi…

cond-mat.mtrl-sci2007

Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern

G. Brammertz, M. Caymax, Y. Mols +6

We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from…

cond-mat.mtrl-sci2007

Selective epitaxial growth of GaAs on Ge by MOCVD

Guy Brammertz, Yves Mols, Stefan Degroote +4

We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from…

cond-mat.mtrl-sci2007

Low temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

Guy Brammertz, Yves Mols, Stefan Degroote +4

Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substra…

cond-mat.mtrl-sci2005★ 39 cited

Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode

P. Van Dorpe, W. Van Roy, J. De Boeck +5

The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series…