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20112022
most citedVapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

1.9k citations · 5.7k across the 21 of their papers we have counts for

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5 papers · 1 filter

cond-mat.mes-hall2019★ 70 cited

Opto-valleytronic imaging of atomically thin semiconductors

Andre Neumann, Jessica Lindlau, Léo Colombier +6

Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their…

cond-mat.mes-hall2014★ 1.2k cited

Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode

Yexin Deng, Zhe Luo, Nathan J. Conrad +7

Phosphorene, an elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier…

cond-mat.mes-hall2013★ 255 cited

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers

Han Liu, Mengwei Si, Yexin Deng +6

In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On…

cond-mat.mes-hall2013★ 234 cited

Temperature-dependent Phonon Shifts in Monolayer MoS2

Nicholas Lanzillo, A. Glen Birdwell, Matin Amani +9

We present a combined experimental and computational study of two-dimensional molybdenum disulfde (MoS2) and the effect of temperature on the frequency shifts of the Raman-active E…

cond-mat.mes-hall2013★ 223 cited

Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films

Han Liu, Mengwei Si, Sina Najmaei +5

Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectroni…