activity
20182022
most citedImplanting germanium into graphene

126 citations · 174 across the 6 of their papers we have counts for

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Showing 2018Show all

5 papers · 1 filter

cond-mat.mtrl-sci2018

Structure-property relationship of CoMnSi thin films in response to He -irradiation

F. Hammerath, R. Bali, R. Huebner +7

We investigated the structure-property relationship of CoMnSi Heusler thin films upon the irradiation with He ions. The variation of the crystal structure with increasing i…

cond-mat.mtrl-sci2018

CMOS-compatible controlled hyperdoping of silicon nanowires

Yonder Berencén, Slawomir Prucnal, Wolfhard Möller +13

Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy l…

cond-mat.mtrl-sci2018★ 5 cited

Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction

Ye Yuan, Mao Wang, Chi Xu +6

In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping t…

cond-mat.mtrl-sci2018★ 126 cited

Implanting germanium into graphene

Mukesh Tripathi, Alexander Markevich, Roman Böttger +4

Incorporating heteroatoms into the graphene lattice may be used to tailor its electronic, mechanical and chemical properties. Direct substitutions have thus far been limited to inc…

cond-mat.mtrl-sci2018★ 10 cited

Symmetry-breaking supercollisions in Landau-quantized graphene

Florian Wendler, Martin Mittendorff, Jacob C. König-Otto +8

Recent pump-probe experiments performed on graphene in a perpendicular magnetic field have revealed carrier relaxation times ranging from picoseconds to nanoseconds depending on th…