432 citations · 724 across the 68 of their papers we have counts for
9 papers · 1 filter
Tuning the Coercive Field in Ferroelectric Hf0.5Zr0.5O2-Al2O3 Heterostructures via Interfacial Charge Dynamics
Marshall B. Frye, Chanyoung Kim, Jeong-Woo Sun +8
Interleaving dielectric layers into ferroelectric Hf0.5Zr0.5O2 (HZO) films increases the memory window (MW) beyond what is accounted for by the dielectric constants. Determining th…
Coordination-Sensitive Nanoscale Analysis of Defect-Driven Phase Transformation in Si-Doped (AlXGa1-X)2O3
Shaon Das, Jith Sarker, Christopher Chae +5
Defect-driven phase instability critically influences the structural reliability of ultrawide bandgap oxides, yet direct nanoscale metrics linking local chemistry to structural tra…
Scalable Etch-Free Transfer of Low-Dimensional Materials from Metal Films to Diverse Substrates
Kentaro Yumigeta, Muhammed Yusufoglu, Mamun Sarker +12
Low-dimensional materials hold great promises for exploring emergent physical phenomena, nanoelectronics, and quantum technologies. Their synthesis often depends on catalytic metal…
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Cindy Y. Chen, Zheng Sun, Riccardo Torsi +8
Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To ha…
Low voltage local strain enhanced switching of magnetic tunnel junctions
Suyogya Karki, Jaesuk Kwon, Joe Davies +5
Strain-controlled modulation of the magnetic switching behavior in magnetic tunnel junctions (MTJs) could provide the energy efficiency needed to accelerate the use of MTJs in memo…
Silicon Implantation and Annealing in -GaO: Role of Ambient, Temperature, and Time
K. R. Gann, N. Pieczulewski1, C. A. Gorsak +9
Optimizing thermal anneals of Si-implanted -GaO is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature…