1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2024
Ultra-thin strain-relieving SiGe layers enabling III-V epitaxy on Si
Trevor R. Smith, Spencer McDermott, Vatsalkumar Patel +4
The explosion of artificial intelligence, possible end of Moore's law, dawn of quantum computing and continued exponential growth of data communications traffic have brought new ur…
physics.app-ph2023★ 1 cited
Phosphorus-Controlled Nanoepitaxy in the Asymmetric Growth of GaAs-InP Core-Shell Bent Nanowires
Spencer McDermott, Trevor R. Smith, Ray R. LaPierre +1
Breakthroughs extending nanostructure engineering beyond what is possible with current fabrication techniques will be crucial for enabling next-generation nanotechnologies. Nanoepi…