Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems

Ch. A. Lehner, T. Tschirky, T. Ihn +4

We present molecular beam epitaxial grown single- and double-side $\delta$-doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffer…