304 citations · 304 across the 4 of their papers we have counts for
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Guy Brammertz, Yves Mols, Stefan Degroote +4
Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substra…