Low temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

Guy Brammertz, Yves Mols, Stefan Degroote +4

Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substra…