1 citations · 2 across the 5 of their papers we have counts for
5 papers
Generation of C-band entangled photon pairs by biexciton-exciton cascade from symmetric InAs/InP quantum dots
Anna Musiał, Maja Wasiluk, Katarzyna Roszak +6
Hereby, we study the generation of pairs of polarization-entangled photons at telecom C-band by biexciton-exciton cascade from non-resonantly excited epitaxial InAs/InP quantum dot…
Optical Activity of Group III-V Quantum Dots Directly Embedded in Silicon
M. Gawełczyk, K. Gawarecki
Optically active III-V group semiconductor quantum dots (QDs) are the leading element of the upcoming safe quantum communication. However, the entire electronic and IT infrastructu…
Optical and magnetic response by design in GaAs quantum dots
Christian Schimpf, Ailton J. Garcia, Zhe X. Koong +24
Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic-…
Distributed Bragg reflector-mediated excitation of InAs/InP quantum dots emitting in the telecom C-band
A. Musiał, M. Wasiluk, M. Gawełczyk +4
We demonstrate that optical excitation of InAs quantum dots (QDs) embedded directly in an InP matrix can be mediated via states in a quaternary compound constituting an InP/InGaAlA…
Effects of dislocation filtering layers on optical properties of third telecom window emitting InAs/InGaAlAs quantum dots grown on silicon substrates
Wojciech Rudno-Rudziński, Michał Gawełczyk, Paweł Podemski +6
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirec…